Photoacoustic spectroscopy of photovoltaic materials

M. A. Slifkin; L. Lurie; Aryeh M. Weiss

doi:10.1117/12.281326

Photoacoustic spectroscopy of photovoltaic materials

M. A. Slifkin
, L. Lurie
, Aryeh M. Weiss

Jerusalem College of Technology

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

A photoacoustic spectrometer is described which has been constructed to measure the spectra of photovoltaic materials in the ultra violet, visible and near infra red regions. The range of this photoacoustic spectrometer is from 0.3 to 1.8 micrometers. This technique has the advantage of being non- intrusive and non-destructive. Measurements have been made of a variety of photovoltaic materials, including a CdS/CuIn_{1- x}Ga_xSe₂ heterojunction and an InP/InGaAsP quantum well layer system. Bands arising from intrinsic impurity subgap levels were observed beyond the band edges.

Original language	English
Pages (from-to)	481-487
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3110
DOIs	https://doi.org/10.1117/12.281326
State	Published - 1997
Externally published	Yes
Event	10th Meeting on Optical Engineering in Israel - Jerusalem, Israel Duration: 2 Mar 1997 → 2 Mar 1997

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Photoacoustic spectroscopy

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10.1117/12.281326

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title = "Photoacoustic spectroscopy of photovoltaic materials",

abstract = "A photoacoustic spectrometer is described which has been constructed to measure the spectra of photovoltaic materials in the ultra violet, visible and near infra red regions. The range of this photoacoustic spectrometer is from 0.3 to 1.8 micrometers. This technique has the advantage of being non- intrusive and non-destructive. Measurements have been made of a variety of photovoltaic materials, including a CdS/CuIn1- xGaxSe2 heterojunction and an InP/InGaAsP quantum well layer system. Bands arising from intrinsic impurity subgap levels were observed beyond the band edges.",

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T1 - Photoacoustic spectroscopy of photovoltaic materials

AU - Slifkin, M. A.

AU - Lurie, L.

AU - Weiss, Aryeh M.

PY - 1997

Y1 - 1997

N2 - A photoacoustic spectrometer is described which has been constructed to measure the spectra of photovoltaic materials in the ultra violet, visible and near infra red regions. The range of this photoacoustic spectrometer is from 0.3 to 1.8 micrometers. This technique has the advantage of being non- intrusive and non-destructive. Measurements have been made of a variety of photovoltaic materials, including a CdS/CuIn1- xGaxSe2 heterojunction and an InP/InGaAsP quantum well layer system. Bands arising from intrinsic impurity subgap levels were observed beyond the band edges.

AB - A photoacoustic spectrometer is described which has been constructed to measure the spectra of photovoltaic materials in the ultra violet, visible and near infra red regions. The range of this photoacoustic spectrometer is from 0.3 to 1.8 micrometers. This technique has the advantage of being non- intrusive and non-destructive. Measurements have been made of a variety of photovoltaic materials, including a CdS/CuIn1- xGaxSe2 heterojunction and an InP/InGaAsP quantum well layer system. Bands arising from intrinsic impurity subgap levels were observed beyond the band edges.

KW - Photoacoustic spectroscopy

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VL - 3110

SP - 481

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - 10th Meeting on Optical Engineering in Israel

Y2 - 2 March 1997 through 2 March 1997

ER -

Photoacoustic spectroscopy of photovoltaic materials

Abstract

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Keywords

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