Perspective on III-V barrier detectors

Keyphrases

• III-V 100%
• Barrier Detectors 100%
• Depletion Region 50%
• Photodiode 50%
• T2SL 50%
• Generation-recombination 50%
• Low Mobility 25%
• High Performance 25%
• High Mobility 25%
• Dark Current 25%
• Diffusion Length 25%
• Absorber 25%
• Detector Array 25%
• Device Architecture 25%
• Diffusion Limit 25%
• Recombination Mechanism 25%
• Bulk Alloys 25%
• Majority Carriers 25%
• Long Lifetime 25%
• Auger Recombination 25%
• Non-metallic 25%
• Wide Bandgap 25%
• Band Alignment 25%
• InSb 25%
• Narrow Gap 25%
• Challenges for the Future 25%
• GaSb 25%
• Thermal Generation 25%
• Type-II Superlattice 25%
• InAsSb 25%
• Long-wave Infrared 25%
• Generation-recombination Current 25%
• Mid-wave 25%
• III-V Materials 25%
• Barrier Materials 25%
• Performance Barrier 25%
• Bulk-type 25%
• Dual-band Photodetector 25%
• Atmospheric Transparency Window 25%
• Unity Gain 25%
• Short Lifetime 25%

Engineering

• Depletion Region 100%
• Photodiode 100%
• Photodetector 50%
• Detector Array 50%
• Bulk Alloy 50%
• Future Design 50%
• Recombination Mechanism 50%
• Superlattice 50%
• Barrier Performance 50%
• Barrier Material 50%
• Diffusion Length 50%
• Auger Recombination 50%

Material Science

• Superlattice 100%