Persistent light-induced change in the effective band gap and reversible control over the effective band gap in bulk semiconductor crystals

Sharon Shwartz, K. V. Adarsh, Mordechai Segev, Evgeny Lakin, Emil Zolotoyabko, Uri El-Hanany

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We demonstrate that the effective optical band gap of bulk semiconductor CdZnTe:V crystals can be varied and controlled by dual application of light and electric field, both at moderate strengths. When the combined effect of light intensity and applied field exceeds a threshold, the effective band-gap shift persists even after the light is turned off, as long as the electric field is applied. The persistent effective band-gap shift is accompanied by persistent photocurrent and persistent change in the (220) d spacing of crystalline lattice. However, all persistence effects can be reset to their original values when the applied field is turned off.

Original languageEnglish
Article number241201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number24
DOIs
StatePublished - 16 Jun 2011
Externally publishedYes

Funding

FundersFunder number
Seventh Framework Programme228029

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