Performance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective

Mateo Rendón, Christian Cao, Kevin Landázuri, Esteban Garzón, Luis Miguel Prócel, Ramiro Taco

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing the importance of high performance while maintaining energy efficiency to ensure long battery life. FinFET and Tunnel-FET technologies have emerged as attractive alternatives to overcome the limitations of supply voltage scaling for ultra-low power applications. This work compares the performance of 10 nm FinFET-and TFET-based digital circuits from basic logic gates up to an 8k gates low-power microprocessor. When compared with their FinFET-based counterparts, the TFET-based logic gates have lower leakage power when operated below 300 mV, show higher input capacitance, and exhibit a reduced propagation delay under different fan-in and fan-out conditions. Our comparative study was extended to the synthesis of an MSP-430 microprocessor through standard cell libraries built particularly for this work. It is demonstrated that the TFET-based synthesized circuits operating at ultra-low voltages achieve a higher performance in terms of speed at the cost of increased power consumption. When the speed requirements are relaxed, the TFET-based designs are the most energy-efficient alternative. It is concluded that the TFET is an optimal solution for ultra-low voltage design.

Original languageEnglish
Article number632
JournalElectronics (Switzerland)
Issue number4
StatePublished - 1 Feb 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.


  • Characterization
  • FinFET
  • MSP-430
  • Standard cell library
  • Synthesis
  • Tunnel-FET (TFET)
  • Ultra-low voltage


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