Performance Benchmarking of TFET and FinFET Digital Circuits from a Synthesis-Based Perspective

Mateo Rendón, Christian Cao, Kevin Landázuri, Esteban Garzón, Luis Miguel Prócel, Ramiro Taco

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Miniaturization and portable devices have reshaped the electronic device landscape, emphasizing the importance of high performance while maintaining energy efficiency to ensure long battery life. FinFET and Tunnel-FET technologies have emerged as attractive alternatives to overcome the limitations of supply voltage scaling for ultra-low power applications. This work compares the performance of 10 nm FinFET-and TFET-based digital circuits from basic logic gates up to an 8k gates low-power microprocessor. When compared with their FinFET-based counterparts, the TFET-based logic gates have lower leakage power when operated below 300 mV, show higher input capacitance, and exhibit a reduced propagation delay under different fan-in and fan-out conditions. Our comparative study was extended to the synthesis of an MSP-430 microprocessor through standard cell libraries built particularly for this work. It is demonstrated that the TFET-based synthesized circuits operating at ultra-low voltages achieve a higher performance in terms of speed at the cost of increased power consumption. When the speed requirements are relaxed, the TFET-based designs are the most energy-efficient alternative. It is concluded that the TFET is an optimal solution for ultra-low voltage design.

Original languageEnglish
Article number632
JournalElectronics (Switzerland)
Volume11
Issue number4
DOIs
StatePublished - 1 Feb 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

  • Characterization
  • FinFET
  • MSP-430
  • Standard cell library
  • Synthesis
  • Tunnel-FET (TFET)
  • Ultra-low voltage

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