Peculiar nonlinear depletion in double-layered gated Si-δ-doped GaAs

T. C. Lu, L. B. Lin, M. Levin, V. Ginodman, I. Shlimak

Research output: Contribution to journalArticlepeer-review

Abstract

The low temperature measurement for the Hall effect of the two-dimensional electron system in a double-layered gated Si-δ-doped GaAs was presented. The complex peculiar nonlinear dependence of depletion on gate voltage was observed. The nonlinearity was explained on the basis of the assumption that the double-capacity model consists of two δ-doped two-dimensional electron layers and a metallic gate. The experimental results show that the electron mobility is linear with the electron density on a log-log scale.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume22
Issue number5
StatePublished - May 2001
Externally publishedYes

Keywords

  • Double-layered gated Si-δ-doped GaAs
  • Nonlinear depletion

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