Parameter Variation Analysis of Dopingless and Junctionless Nanotube MOSFET

Keyphrases

• Circuit Application 10%
• Design Parameters 20%
• Device Design 10%
• Dielectric Materials 10%
• Dopingless 100%
• Gate Length 10%
• Heavily Doped 10%
• Junction-less 100%
• Length Variation 10%
• Low Power Circuits 10%
• Low Power Digital Circuits 10%
• MOSFET 100%
• Nanotubes 100%
• On-state Current 10%
• Parameter Variation 100%
• Performance Parameters 10%
• Subthreshold Slope 20%
• Temperature Variation 20%
• Variation Analysis 100%

Engineering

• Design Parameter 20%
• Dielectrics 10%
• Digital Circuits 10%
• Gate Length 10%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Nanotube 100%
• Parameter Variation 100%
• Performance Parameter 10%
• Subthreshold Slope 20%

Material Science

• Dielectric Material 10%
• Electronic Circuit 20%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Nanotube 100%