Abstract
In this paper, dopingless nanotube MOSFET (DL-NT MOSFET) has been designed for low power circuit applications. Performance parameters of proposed device are extracted and compared with junctionless nanotube (JL-NT MOSFET). DL-NT MOSFET has low ON current and less sensitivity towards the various device design parameter variation than heavily doped JL-NT MOSFET. It has also been observed that Subthreshold slope (SS), DIBL, ION,and IOFF current of DL-NT MOSFET has shown least sensitivity on gate length variation as compared to JL-NT MOSFET. Sensitivity towards the temperature variations has also been analysed for both the devices. DL-NT MOSFET shows very less changes in SS and DIBL ION, and IOFF current on temperature variation as compared to JL-NT MOSFET. Therefore, DL-NT MOSFET with suitable design parameters and dielectric material may be used for low power digital circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 5255-5263 |
| Number of pages | 9 |
| Journal | Silicon |
| Volume | 14 |
| Issue number | 10 |
| DOIs | |
| State | Published - Jul 2022 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2021, Springer Nature B.V.
Funding
Raj Kumar acknowledges the RGNF (UGC) for the financial assistance and UIET (ECE), Panjab University for providing Lab facility. Raj Kumar acknowledges the RGNF (UGC) for the financial assistance and UIET (ECE), Panjab University for providing Lab facility.
| Funders | Funder number |
|---|---|
| UIET | |
| University Grants Commission | |
| University Grants Committee | |
| Panjab University |
Keywords
- Dielectric constant
- Dopingless (DL)
- Junctionless (JL)
- Nanotube (NT)
- Sensitivity