Abstract
In this paper, dopingless nanotube MOSFET (DL-NT MOSFET) has been designed for low power circuit applications. Performance parameters of proposed device are extracted and compared with junctionless nanotube (JL-NT MOSFET). DL-NT MOSFET has low ON current and less sensitivity towards the various device design parameter variation than heavily doped JL-NT MOSFET. It has also been observed that Subthreshold slope (SS), DIBL, ION,and IOFF current of DL-NT MOSFET has shown least sensitivity on gate length variation as compared to JL-NT MOSFET. Sensitivity towards the temperature variations has also been analysed for both the devices. DL-NT MOSFET shows very less changes in SS and DIBL ION, and IOFF current on temperature variation as compared to JL-NT MOSFET. Therefore, DL-NT MOSFET with suitable design parameters and dielectric material may be used for low power digital circuits.
| Original language | English |
|---|---|
| Pages (from-to) | 5255-5263 |
| Number of pages | 9 |
| Journal | Silicon |
| Volume | 14 |
| Issue number | 10 |
| DOIs | |
| State | Published - Jul 2022 |
| Externally published | Yes |
Bibliographical note
Funding Information:Raj Kumar acknowledges the RGNF (UGC) for the financial assistance and UIET (ECE), Panjab University for providing Lab facility.
Funding Information:
Raj Kumar acknowledges the RGNF (UGC) for the financial assistance and UIET (ECE), Panjab University for providing Lab facility.
Publisher Copyright:
© 2021, Springer Nature B.V.
Keywords
- Dielectric constant
- Dopingless (DL)
- Junctionless (JL)
- Nanotube (NT)
- Sensitivity