Parameter Variation Analysis of Dopingless and Junctionless Nanotube MOSFET

Shashi Bala, Raj Kumar, Arvind Kumar

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, dopingless nanotube MOSFET (DL-NT MOSFET) has been designed for low power circuit applications. Performance parameters of proposed device are extracted and compared with junctionless nanotube (JL-NT MOSFET). DL-NT MOSFET has low ON current and less sensitivity towards the various device design parameter variation than heavily doped JL-NT MOSFET. It has also been observed that Subthreshold slope (SS), DIBL, ION,and IOFF current of DL-NT MOSFET has shown least sensitivity on gate length variation as compared to JL-NT MOSFET. Sensitivity towards the temperature variations has also been analysed for both the devices. DL-NT MOSFET shows very less changes in SS and DIBL ION, and IOFF current on temperature variation as compared to JL-NT MOSFET. Therefore, DL-NT MOSFET with suitable design parameters and dielectric material may be used for low power digital circuits.

Original languageEnglish
Pages (from-to)5255-5263
Number of pages9
JournalSilicon
Volume14
Issue number10
DOIs
StatePublished - Jul 2022
Externally publishedYes

Bibliographical note

Funding Information:
Raj Kumar acknowledges the RGNF (UGC) for the financial assistance and UIET (ECE), Panjab University for providing Lab facility.

Funding Information:
Raj Kumar acknowledges the RGNF (UGC) for the financial assistance and UIET (ECE), Panjab University for providing Lab facility.

Publisher Copyright:
© 2021, Springer Nature B.V.

Keywords

  • Dielectric constant
  • Dopingless (DL)
  • Junctionless (JL)
  • Nanotube (NT)
  • Sensitivity

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