Oxygenation and air-annealing effects on the electronic properties of Cu(In,Ga)Se2 films and devices

U. Rau, D. Braunger, R. Herberholz, H. W. Schock, J. F. Guillemoles, L. Kronik, David Cahen

Research output: Contribution to journalArticlepeer-review

178 Scopus citations

Abstract

Photoelectron spectroscopy and admittance spectroscopy were used to analyze Cu(In,Ga)Se2 (CIGS) based thin films and heterojunction solar cells based on chemical oxygenation and post-deposition air-annealing effects. The effect of CIGS surface chemistry on the electronic structure of the heterojunction solar cells and the influence on the CIGS layer of oxygenation-induced Cu redistribution were analyzed. Results showed that charge redistribution and compensation of the effective acceptor density can be achieved in the bulk of the absorber.

Original languageEnglish
Pages (from-to)497-505
Number of pages9
JournalJournal of Applied Physics
Volume86
Issue number1
DOIs
StatePublished - Jul 1999
Externally publishedYes

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