Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La0.8Sr0.2MnO3

Netanel Naftalis, Noam Haham, Jason Hoffman, Matthew S.J. Marshall, C. H. Ahn, L. Klein

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Abstract

We study the anisotropic magnetoresistance and planar Hall effect of La0.8Sr0.2MnO3 when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry.

Original languageEnglish
Article number053709
JournalJournal of Applied Physics
Volume115
Issue number5
DOIs
StatePublished - 7 Feb 2014

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