Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La0.8Sr0.2MnO3

Netanel Naftalis; Noam Haham; Jason Hoffman; Matthew S.J. Marshall; C. H. Ahn; L. Klein

doi:10.1063/1.4863854

Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La_0.8Sr_0.2MnO₃

Netanel Naftalis, Noam Haham, Jason Hoffman, Matthew S.J. Marshall, C. H. Ahn, L. Klein

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We study the anisotropic magnetoresistance and planar Hall effect of La_0.8Sr_0.2MnO₃ when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry.

Original language	English
Article number	053709
Journal	Journal of Applied Physics
Volume	115
Issue number	5
DOIs	https://doi.org/10.1063/1.4863854
State	Published - 7 Feb 2014

Funding

Funders	Funder number
National Science Foundation	1309868

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10.1063/1.4863854

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abstract = "We study the anisotropic magnetoresistance and planar Hall effect of La0.8Sr0.2MnO3 when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry.",

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AU - Marshall, Matthew S.J.

AU - Ahn, C. H.

AU - Klein, L.

PY - 2014/2/7

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N2 - We study the anisotropic magnetoresistance and planar Hall effect of La0.8Sr0.2MnO3 when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry.

AB - We study the anisotropic magnetoresistance and planar Hall effect of La0.8Sr0.2MnO3 when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry.

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Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La_0.8Sr_0.2MnO₃

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