Optimization of surface morphology to reduce the effect of grain boundaries and contact resistance in small molecule based thin film transistors

Sarita Yadav; Pramod Kumar; Subhasis Ghosh

doi:10.1063/1.4766913

Optimization of surface morphology to reduce the effect of grain boundaries and contact resistance in small molecule based thin film transistors

Sarita Yadav, Pramod Kumar, Subhasis Ghosh

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

Grain boundaries in organic thin film have been controlled by engineering the different growth conditions in such a way that it reduces the contact resistance and enhances the carrier mobility in p-type copper phthalocyanine and n-type copper hexadecafluoro phthalocyanine based organic thin film transistors. Reduced effect of grain boundary has been demonstrated by temperature dependence of charge carrier mobility and other transport parameters. A correlation has been established between contact resistance and certain thin film morphology, achieved by varying different growth conditions.

Original language	English
Article number	193307
Journal	Applied Physics Letters
Volume	101
Issue number	19
DOIs	https://doi.org/10.1063/1.4766913
State	Published - 5 Nov 2012
Externally published	Yes

Bibliographical note

Funding Information:
S.Y. and P.K. thank Council of Scientific & Industrial Research, India for the financial support through fellowship. This work was partly supported by DST, Government of India.

Funding

S.Y. and P.K. thank Council of Scientific & Industrial Research, India for the financial support through fellowship. This work was partly supported by DST, Government of India.

Funders	Funder number
Department of Science and Technology, Ministry of Science and Technology, India
Council of Scientific and Industrial Research, India

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Optimization of surface morphology to reduce the effect of grain boundaries and contact resistance in small molecule based thin film transistors

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