Abstract
p-type AlGaN Electron Blocking Layer (EBL) has been used successfully for suppression of electron leakage to the p side cladding layers. InGaN/GaN based laser diodes have been investigated numerically for improvements in the output parameters of laser diodes by adjusting the Al composition of the EBL. It is found that Al composition in the EBL is critical for optimum performance of the laser diodes.
Original language | English |
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Title of host publication | The Physics of Semiconductor Devices - Proceedings of IWPSD 2017 |
Editors | R.K. Sharma, D.S. Rawal |
Publisher | Springer Science and Business Media, LLC |
Pages | 1089-1093 |
Number of pages | 5 |
ISBN (Print) | 9783319976037 |
DOIs | |
State | Published - 2019 |
Externally published | Yes |
Event | 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 - New Delhi, India Duration: 11 Dec 2017 → 15 Dec 2017 |
Publication series
Name | Springer Proceedings in Physics |
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Volume | 215 |
ISSN (Print) | 0930-8989 |
ISSN (Electronic) | 1867-4941 |
Conference
Conference | 19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 |
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Country/Territory | India |
City | New Delhi |
Period | 11/12/17 → 15/12/17 |
Bibliographical note
Publisher Copyright:© Springer Nature Switzerland AG 2019.