Optimization of al composition in ebl of ingan/gan based laser diodes

Abhishek Sharma, Kamal Lohani, Pramod Kumar, Alok Jain

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

p-type AlGaN Electron Blocking Layer (EBL) has been used successfully for suppression of electron leakage to the p side cladding layers. InGaN/GaN based laser diodes have been investigated numerically for improvements in the output parameters of laser diodes by adjusting the Al composition of the EBL. It is found that Al composition in the EBL is critical for optimum performance of the laser diodes.

Original languageEnglish
Title of host publicationThe Physics of Semiconductor Devices - Proceedings of IWPSD 2017
EditorsR.K. Sharma, D.S. Rawal
PublisherSpringer Science and Business Media, LLC
Pages1089-1093
Number of pages5
ISBN (Print)9783319976037
DOIs
StatePublished - 2019
Externally publishedYes
Event19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017 - New Delhi, India
Duration: 11 Dec 201715 Dec 2017

Publication series

NameSpringer Proceedings in Physics
Volume215
ISSN (Print)0930-8989
ISSN (Electronic)1867-4941

Conference

Conference19th International Workshop on Physics of Semiconductor Devices, IWPSD 2017
Country/TerritoryIndia
CityNew Delhi
Period11/12/1715/12/17

Bibliographical note

Publisher Copyright:
© Springer Nature Switzerland AG 2019.

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