TY - GEN
T1 - Optically readable resistive random access memory in silicon plasmonics platform
AU - Emboras, A.
AU - Goykhman, I.
AU - Desiatov, B.
AU - Mazurski, N.
AU - Stern, L.
AU - Shappir, J.
AU - Levy, U.
PY - 2014
Y1 - 2014
N2 - We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis.
AB - We experimentally demonstrate resistive random access memory device integrated with a silicon plasmonic waveguide, and relying on the formation of nanoscale metallic needles. The measured electrical and optical response show distinct bistability with well-defined hysteresis.
UR - https://www.scopus.com/pages/publications/85086750152
U2 - 10.1364/cleo_si.2014.stu1h.4
DO - 10.1364/cleo_si.2014.stu1h.4
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SN - 9781557529992
SN - 9781557529992
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - Optical Society of America (OSA)
T2 - CLEO: Science and Innovations, CLEO_SI 2014
Y2 - 8 June 2014 through 13 June 2014
ER -