Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors

Anupama Yadav, Cameron Glasscock, Elena Flitsiyan, Leonid Chernyak, Igor Lubomirsky, Sergey Khodorov, Joseph Salzman, Boris Meyler, Carlo Coppola, Sebestian Guay, Jasques Boivin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The impact of 60Co gamma-irradiation on n-channel AlGaN/GaN high-electron-mobility transistors was studied by means of temperature-dependent electron beam-induced current (EBIC) and cathodoluminescence (CL) techniques. For the doses up to ∼250 Gy, an enhancement of minority carrier transport was observed as evident from the EBIC measurements. This enhancement is associated with internal electron irradiation induced by the primary gamma photons. For the doses above ∼250 Gy, deterioration in minority carrier transport was explained by carrier scattering on radiation-induced defects. It is shown that calculated activation energy from the EBIC and CL measurements follows exactly the same trend, which implies that the same underlying phenomenon is responsible for observed findings.

Original languageEnglish
Pages (from-to)223-230
Number of pages8
JournalRadiation Effects and Defects in Solids
Issue number3-4
StatePublished - 3 Mar 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2016 Informa UK Limited, trading as Taylor & Francis Group.


  • High-electron-mobility transistors
  • activation energy
  • diffusion length
  • gamma-irradiation
  • lifetime


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