TY - JOUR
T1 - On the measurement of densities of states in amorphous semiconductors
AU - Halpern, V.
PY - 1984/5
Y1 - 1984/5
N2 - In many analyses of experimental results on amorphous semiconductors, it is assumed that the only important transitions from localized states are those to extended states above the mobility edge. However, for states sufficiently far below this edge, hopping transitions between localized states become more probable than transitions to extended states. The temperature-dependence of the critical energy E0(T) at which this occurs is examined, and is calculated for a simple model.
AB - In many analyses of experimental results on amorphous semiconductors, it is assumed that the only important transitions from localized states are those to extended states above the mobility edge. However, for states sufficiently far below this edge, hopping transitions between localized states become more probable than transitions to extended states. The temperature-dependence of the critical energy E0(T) at which this occurs is examined, and is calculated for a simple model.
UR - http://www.scopus.com/inward/record.url?scp=0021424145&partnerID=8YFLogxK
U2 - 10.1080/13642818408227652
DO - 10.1080/13642818408227652
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AN - SCOPUS:0021424145
SN - 1364-2812
VL - 49
SP - 57
EP - 59
JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
IS - 5
ER -