On the measurement of densities of states in amorphous semiconductors

V. Halpern

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


In many analyses of experimental results on amorphous semiconductors, it is assumed that the only important transitions from localized states are those to extended states above the mobility edge. However, for states sufficiently far below this edge, hopping transitions between localized states become more probable than transitions to extended states. The temperature-dependence of the critical energy E0(T) at which this occurs is examined, and is calculated for a simple model.

Original languageEnglish
Pages (from-to)57-59
Number of pages3
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number5
StatePublished - May 1984


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