TY - JOUR
T1 - On the influence of the inner δ-layer on the low-temperature resistance saturation in gated Si-δ-doped double-layered GaAs
AU - Levin, M.
AU - Tie-Cheng, Lu
AU - Shlimak, I.
AU - Ginodman, V.
AU - Resnick, L.
PY - 2002/6
Y1 - 2002/6
N2 - During measurements of the temperature dependence of the conductivity of a gated Si-δ-doped GaAs structure with two 'deep' δ-layers in the depletion regime, a resistance saturation was observed when the temperature decreased below 1 K, instead of the exponential growth expected for the variable-range hopping (VRH) mechanism. A possible origin of this saturation is analysed, related to a quantum capacitance effect in the inner δ-layer. In addition, results of the investigation of the influence of a depleting gate voltage Vg on the longitudinal 2D resistivity ρxx and Hall effect in a double-layered Si-δ-doped GaAs sample are presented.
AB - During measurements of the temperature dependence of the conductivity of a gated Si-δ-doped GaAs structure with two 'deep' δ-layers in the depletion regime, a resistance saturation was observed when the temperature decreased below 1 K, instead of the exponential growth expected for the variable-range hopping (VRH) mechanism. A possible origin of this saturation is analysed, related to a quantum capacitance effect in the inner δ-layer. In addition, results of the investigation of the influence of a depleting gate voltage Vg on the longitudinal 2D resistivity ρxx and Hall effect in a double-layered Si-δ-doped GaAs sample are presented.
UR - http://www.scopus.com/inward/record.url?scp=0036611228&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/17/6/313
DO - 10.1088/0268-1242/17/6/313
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AN - SCOPUS:0036611228
SN - 0268-1242
VL - 17
SP - 575
EP - 578
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 6
ER -