On the hydrogen evolution reaction activity of graphene-hBN van der Waals heterostructures

Sumit Bawari, Nisheal M. Kaley, Shubhadeep Pal, Thazhe Veettil Vineesh, Shamasree Ghosh, Jagannath Mondal, Tharangattu N. Narayanan

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Although graphene technology has reached technology readiness level 9 and hydrogen fuel has been identified as a viable futuristic energy resource, pristine atomic layers such as graphene are found to be inactive towards the hydrogen evolution reaction (HER). Enhancing the intrinsic catalytic activity of a material and increasing its number of active sites by nanostructuring are two strategies in novel catalyst development. Here, electrocatalytically inert graphene (G) and hexagonal boron nitride (hBN) are made active for the HER by forming van der Waals (vdW) heterostructures via vertical stacking. The HER studies are conducted using defect free shear exfoliated graphite and hBN modified glassy carbon electrodes via layer by layer sequential stacking. The G/hBN stacking pattern (AA, AB, and AB′) and stacking sequence (G/hBN or hBN/G) have been found to play important roles in the HER activity. Enhancement in the intrinsic activity of graphene by the formation of G/hBN vdW stacks has been further confirmed with thermally reduced graphene oxide and hBN based structures. Tunability in the HER performance of the G/hBN vdW stack is also confirmed via a three-dimensional rGO/hBN electrode. HER active sites in the G/hBN vdW structures are then mapped using density functional theory calculations, and an atomistic interpretation has been identified.

Original languageEnglish
Pages (from-to)15007-15014
Number of pages8
JournalPhysical Chemistry Chemical Physics
Volume20
Issue number22
DOIs
StatePublished - 6 Jun 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018 the Owner Societies.

Funding

TNN and JM acknowledge the financial support received from the Tata Institute of Fundamental Research. The authors also thank Dr Arnab Ghosh (presently at IIT Kharagpur, India) and Prof. Satyam Parlappalli, Institute of Physics, Bhubaneswar, India for extending the TEM facility and also helping in TEM data analyses. The authors thank Dr Kanchan Garai, TIFR Hyderabad for providing the AFM facility. TNN also acknowledges DST-SERB, India for the funding support in the form of an extra-mural research grant for working on van der Waals solid-based structures (EMR/2017/000513). The computational work was partially supported by early career research grant provided to JM by DST-SERB (ECR/2016/000672).

FundersFunder number
DST-SERBECR/2016/000672, EMR/2017/000513
Tata Institute of Fundamental Research

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