Abstract
Experimental results are presented of the neutron transmutation doping (NTD) of isotopically controlled 74Ge crystals, irradiated with a high dose of neutron flux Φ (up to 4 × 1019 cm-2). A series of heavily doped samples of n-Ge:As with small compensation ratio K = NA/ND was obtained. Two novel effects connected with high neutron dose Φ have been observed: (i) the dependence of the free electron concentration n = ND - NA on Φ, linear at small n, saturates at n > 3 × 1017 cm-3; (ii) if the NTD procedure is applied to samples previously highly doped by As, the final value of n even decreases (a 'negative doping'). These effects are explained by the enhancement of the formation of complexes of an As impurity with radiation damage at high Φ, which leads to a decrease of n.
| Original language | English |
|---|---|
| Pages (from-to) | 1826-1829 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 11 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1996 |
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