TY - JOUR
T1 - On the doping of isotopically controlled germanium by nuclear transmutation with a high concentration of shallow donor impurities
AU - Shlimak, I.
AU - Ionov, A. N.
AU - Rentzsch, R.
AU - Lazebnik, J. M.
PY - 1996/12
Y1 - 1996/12
N2 - Experimental results are presented of the neutron transmutation doping (NTD) of isotopically controlled 74Ge crystals, irradiated with a high dose of neutron flux Φ (up to 4 × 1019 cm-2). A series of heavily doped samples of n-Ge:As with small compensation ratio K = NA/ND was obtained. Two novel effects connected with high neutron dose Φ have been observed: (i) the dependence of the free electron concentration n = ND - NA on Φ, linear at small n, saturates at n > 3 × 1017 cm-3; (ii) if the NTD procedure is applied to samples previously highly doped by As, the final value of n even decreases (a 'negative doping'). These effects are explained by the enhancement of the formation of complexes of an As impurity with radiation damage at high Φ, which leads to a decrease of n.
AB - Experimental results are presented of the neutron transmutation doping (NTD) of isotopically controlled 74Ge crystals, irradiated with a high dose of neutron flux Φ (up to 4 × 1019 cm-2). A series of heavily doped samples of n-Ge:As with small compensation ratio K = NA/ND was obtained. Two novel effects connected with high neutron dose Φ have been observed: (i) the dependence of the free electron concentration n = ND - NA on Φ, linear at small n, saturates at n > 3 × 1017 cm-3; (ii) if the NTD procedure is applied to samples previously highly doped by As, the final value of n even decreases (a 'negative doping'). These effects are explained by the enhancement of the formation of complexes of an As impurity with radiation damage at high Φ, which leads to a decrease of n.
UR - http://www.scopus.com/inward/record.url?scp=0030409547&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/11/12/010
DO - 10.1088/0268-1242/11/12/010
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AN - SCOPUS:0030409547
SN - 0268-1242
VL - 11
SP - 1826
EP - 1829
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 12
ER -