On the doping of isotopically controlled germanium by nuclear transmutation with a high concentration of shallow donor impurities

I. Shlimak, A. N. Ionov, R. Rentzsch, J. M. Lazebnik

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Abstract

Experimental results are presented of the neutron transmutation doping (NTD) of isotopically controlled 74Ge crystals, irradiated with a high dose of neutron flux Φ (up to 4 × 1019 cm-2). A series of heavily doped samples of n-Ge:As with small compensation ratio K = NA/ND was obtained. Two novel effects connected with high neutron dose Φ have been observed: (i) the dependence of the free electron concentration n = ND - NA on Φ, linear at small n, saturates at n > 3 × 1017 cm-3; (ii) if the NTD procedure is applied to samples previously highly doped by As, the final value of n even decreases (a 'negative doping'). These effects are explained by the enhancement of the formation of complexes of an As impurity with radiation damage at high Φ, which leads to a decrease of n.

Original languageEnglish
Pages (from-to)1826-1829
Number of pages4
JournalSemiconductor Science and Technology
Volume11
Issue number12
DOIs
StatePublished - Dec 1996

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