On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman; Ugo Sassi; Boris Desiatov; Noa Mazurski; Silvia Milana; Domenico De Fazio; Anna Eiden; Jacob Khurgin; Joseph Shappir; Uriel Levy; Andrea C. Ferrari

doi:10.1021/acs.nanolett.5b05216

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman
, Ugo Sassi
, Boris Desiatov
, Noa Mazurski
, Silvia Milana
, Domenico De Fazio
, Anna Eiden
, Jacob Khurgin
, Joseph Shappir
, Uriel Levy
, Andrea C. Ferrari

University of Cambridge
Hebrew University of Jerusalem
Johns Hopkins University

Research output: Contribution to journal › Article › peer-review

303 Scopus citations

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Original language	English
Pages (from-to)	3005-3013
Number of pages	9
Journal	Nano Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.5b05216
State	Published - 11 May 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Funding

We acknowledge funding from EU Graphene Flagship (No. 604391), ERC Grant Hetero2D, and EPSRC Grant Nos. EP/ K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/ 1, and EP/L016087/1.

Funders	Funder number
Seventh Framework Programme	604391
Engineering and Physical Sciences Research Council	EP/L016087/1, EP/K017144/1, EP/M507799/ 1, EP/ K01711X/1, EP/N010345/1
European Commission
European Commission	Hetero2D

Keywords

Graphene
avalanche multiplication
photodetectors
silicon photonics

Access to Document

10.1021/acs.nanolett.5b05216

Cite this

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title = "On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain",

abstract = "We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7\% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.",

keywords = "Graphene, avalanche multiplication, photodetectors, silicon photonics",

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doi = "10.1021/acs.nanolett.5b05216",

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AU - Goykhman, Ilya

AU - Sassi, Ugo

AU - Desiatov, Boris

AU - Mazurski, Noa

AU - Milana, Silvia

AU - De Fazio, Domenico

AU - Eiden, Anna

AU - Khurgin, Jacob

AU - Shappir, Joseph

AU - Levy, Uriel

AU - Ferrari, Andrea C.

PY - 2016/5/11

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AB - We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

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KW - avalanche multiplication

KW - photodetectors

KW - silicon photonics

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On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Abstract

Bibliographical note

Funding

Keywords

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