On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman; Ugo Sassi; Boris Desiatov; Noa Mazurski; Silvia Milana; Domenico De Fazio; Anna Eiden; Jacob Khurgin; Joseph Shappir; Uriel Levy; Andrea C. Ferrari

doi:10.1021/acs.nanolett.5b05216

On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Ilya Goykhman, Ugo Sassi, Boris Desiatov, Noa Mazurski, Silvia Milana, Domenico De Fazio, Anna Eiden, Jacob Khurgin, Joseph Shappir, Uriel Levy, Andrea C. Ferrari

Research output: Contribution to journal › Article › peer-review

268 Scopus citations

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Original language	English
Pages (from-to)	3005-3013
Number of pages	9
Journal	Nano Letters
Volume	16
Issue number	5
DOIs	https://doi.org/10.1021/acs.nanolett.5b05216
State	Published - 11 May 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

Funding

We acknowledge funding from EU Graphene Flagship (No. 604391), ERC Grant Hetero2D, and EPSRC Grant Nos. EP/ K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/ 1, and EP/L016087/1.

Funders	Funder number
Seventh Framework Programme	604391
Engineering and Physical Sciences Research Council	EP/L016087/1, EP/K017144/1, EP/M507799/ 1, EP/ K01711X/1, EP/N010345/1
European Commission
European Commission	Hetero2D

Keywords

Graphene
avalanche multiplication
photodetectors
silicon photonics

Access to Document

10.1021/acs.nanolett.5b05216

Cite this

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abstract = "We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.",

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AU - Goykhman, Ilya

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AU - Desiatov, Boris

AU - Mazurski, Noa

AU - Milana, Silvia

AU - De Fazio, Domenico

AU - Eiden, Anna

AU - Khurgin, Jacob

AU - Shappir, Joseph

AU - Levy, Uriel

AU - Ferrari, Andrea C.

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On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain

Abstract

Bibliographical note

Funding

Keywords

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