Ohmic contacts to p-CuInSe2 crystals

Ellen Moons, Tina Engelhard, David Cahen

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


We report here on the optimization of ohmic contacts to p-CuInSe2 (CISe) single crystals. A low resistance ohmic contact is required to minimize current losses due to series resistance; e.g. in Schottky diodes. Both In-Ga (eutectic)/CISe and gold (evaporatedVCISe contacts have been fabricated on crystals with different orientations and bulk properties. Gold contacts were found to have a lower resistance and to be more stable than In-Ga ones, from the slope of the linear current-voltage plot of the junctions. The resistance of the Au/CISe ohmic contact was decreased by etching the CISe crystal surface chemically in a 0.5% solution of Br2 in methanol for 30 sec at room temperature, prior to gold deposition, while that of the In-Ga contact increased by this etch. Wetting experiments and contact angle measurements showed evidence for changes in the polarity of the surface due to chemical etches.

Original languageEnglish
Pages (from-to)275-280
Number of pages6
JournalJournal of Electronic Materials
Issue number3
StatePublished - Mar 1993
Externally publishedYes


  • Chemical etch
  • CuInSe
  • I-V characteristics
  • contact angle
  • metal-semiconductor
  • ohmic contact


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