Novel technique for RTP annealing of compound semiconductors

M. Fu, V. Sarvepalli, R. K. Singh, C. R. Abernathy, X. Cao, S. J. Pearton, J. A. Sekhar

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

We introduce for the first time a novel rapid thermal processing (RTP) unit called ZapperTM, which has recently been developed by MHI Inc. and the University of Florida for high temperature thermal processing of semiconductors. This ZapperTM unit is capable of reaching much higher temperatures (>1500 °C) than conventional tungsten-halogen lamp RTP equipment and achieving high ramp-up and ramp-down rates. We have conducted implant activation annealing studies of Si+-implanted GaN thin films (with and without an AlN encapsulation layer) using the ZapperTM unit at temperatures up to 1500 °C. The electrical property measurements of such annealed samples have led to the conclusion that high annealing temperatures and AlN encapsulation are needed for the optimum activation efficiency of Si+ implants in GaN. It has clearly been demonstrated that the ZapperTM unit has tremendous potential for RTP annealing of semiconductor materials, especially for wide bandgap compound semiconductors that require very high processing temperatures.

Original languageEnglish
Pages (from-to)345-353
Number of pages9
JournalMaterials Research Society Symposium - Proceedings
Volume483
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 Fall MRS Symposium - Boston, MA, USA
Duration: 1 Dec 19974 Dec 1997

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