Novel synthesis of high surface area silicon carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of organosilanes

We report on a very simple, efficient, and economical synthetic technique that produces SiC of a high surface area, and under different conditions of a silicon carbide-carbon nanocomposite (SCCN) at a relatively low temperature. A high yield of pure products is obtained in a one-stage, single-precursor reaction, without a catalyst. The cracking/dissociation of a triethylsilane precursor is carried out separately in a closed vessel cell (Swagelok) that was heated at 800°C for 3 h, yielding SCCN, and at 1000°C for 3 h, yielding SiC. This synthetic process is termed RAPET (Reactions under Autogenic Pressure at Elevated Temperature) process for the synthesis of nanomaterials.