Abstract
We have developed a unique method to produce smooth diamond films using a modified microwave plasma process system. This method consists of sequential in situ deposition and planarization in an electron cyclotron resonance plasma system. Diamond films were deposited to a thickness of 3.0 μm in this system at a pressure of 1.000 Torr from gas mixtures of methanol and hydrogen. Deposition was followed by planarization using a two-grid ion beam extraction process with a pure oxygen plasma at 10 mTorr. The average roughness of the diamond films so produced was as low as 30 nm, which was a factor of two lower than that of the as-deposited diamond films.
| Original language | English |
|---|---|
| Pages (from-to) | 1735-1737 |
| Number of pages | 3 |
| Journal | Journal of Materials Research |
| Volume | 13 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |