NONOHMIC IMPURITY CONDUCTIVITY OF LIGHTLY DOPED GERMANIUM.

An experimental investigation was made of the nonohmic impurity conductivity of lightly doped germanium. When the degree of compensation was low and temperatures were 5-3 degree K, the conductivity decreased in an electric field in the range of carrier densities (N similar 5. 10**1**5 cm** minus **3) corresponding to a deviation from the dependence epsilon //3 varies directly as N**1**/**3. This was due to the formation of an impurity band from the ground states of shallow impurities. An increase in the fluctuations of the potential resulted in a change from the band to the hopping conduction mechanism. The nonohmic hopping conductivity obeyed the law in sigma equals 0. 6eER/kT (R is the jump length).