Abstract
This work presents a non-volatile content-addressable memory (NV-CAM) based on double-barrier magnetic tunnel junction technology (DMTJ). Unlike state-of-the-art NV-CAM designs that present low-performance updates, our NV-CAM allows energy-efficient, high-performance search and update operations. This makes it well-suited for applications requiring a high frequency of searches/updates, such as associative processors. The NV-CAM hybrid CMOS/DMTJ was designed using a commercial 65nm CMOS technology and a Verilog-A-based DMTJ compact model. The NV-CAM evaluation was carried out by employing Monte Carlo simulations while accounting for process variations. Simulation results show that our NV-CAM presents competitive figures of merit compared to state-of-the-art design. Our NV-CAM presents energy-efficient operations and reduces the update and search delay by about 71% and 75%, respectively, compared to other NV-CAMs.
| Original language | English |
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| Title of host publication | ISCAS 2025 - IEEE International Symposium on Circuits and Systems, Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9798350356830 |
| DOIs | |
| State | Published - 2025 |
| Externally published | Yes |
| Event | 2025 IEEE International Symposium on Circuits and Systems, ISCAS 2025 - London, United Kingdom Duration: 25 May 2025 → 28 May 2025 |
Publication series
| Name | Proceedings - IEEE International Symposium on Circuits and Systems |
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| ISSN (Print) | 0271-4310 |
Conference
| Conference | 2025 IEEE International Symposium on Circuits and Systems, ISCAS 2025 |
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| Country/Territory | United Kingdom |
| City | London |
| Period | 25/05/25 → 28/05/25 |
Bibliographical note
Publisher Copyright:© 2025 IEEE.
Keywords
- CAM
- Content-addressable memory
- DMTJ
- Non-Volatile CAM
- double-barrier magnetic tunnel junction