Non-Volatile Content-Addressable Memory for Energy-Efficient & High-Performance Search and Update Operations

  • Alessandro Bedoya
  • , Benjamin Zambrano
  • , Ramiro Taco
  • , Luis Miguel Prócel
  • , Marco Lanuzza
  • , Esteban Garzón

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents a non-volatile content-addressable memory (NV-CAM) based on double-barrier magnetic tunnel junction technology (DMTJ). Unlike state-of-the-art NV-CAM designs that present low-performance updates, our NV-CAM allows energy-efficient, high-performance search and update operations. This makes it well-suited for applications requiring a high frequency of searches/updates, such as associative processors. The NV-CAM hybrid CMOS/DMTJ was designed using a commercial 65nm CMOS technology and a Verilog-A-based DMTJ compact model. The NV-CAM evaluation was carried out by employing Monte Carlo simulations while accounting for process variations. Simulation results show that our NV-CAM presents competitive figures of merit compared to state-of-the-art design. Our NV-CAM presents energy-efficient operations and reduces the update and search delay by about 71% and 75%, respectively, compared to other NV-CAMs.

Original languageEnglish
Title of host publicationISCAS 2025 - IEEE International Symposium on Circuits and Systems, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350356830
DOIs
StatePublished - 2025
Externally publishedYes
Event2025 IEEE International Symposium on Circuits and Systems, ISCAS 2025 - London, United Kingdom
Duration: 25 May 202528 May 2025

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2025 IEEE International Symposium on Circuits and Systems, ISCAS 2025
Country/TerritoryUnited Kingdom
CityLondon
Period25/05/2528/05/25

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Keywords

  • CAM
  • Content-addressable memory
  • DMTJ
  • Non-Volatile CAM
  • double-barrier magnetic tunnel junction

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