New mechanism for the electrical resistivity of layer compounds: TiS 2 [4]

M. Kaveh, M. F. Cherry

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The authors propose that electrons in the layer compound TiS2 are strongly coupled to a soft interlayer mode. The soft-mode frequency is estimated to be 10-20 cm-1 and is the lowest frequency mode in the system. This mode is not observed by Raman scattering in a monolayer compound because it corresponds to a zero frequency at zero wavevector and must be looked for by neutron scattering. From symmetry, this mode couples only quadratically to the electrons, leading to a resistivity p varies as T2 for T>or=20K in agreement with the observed T2 law for the resistivity of TiS2 for 20K<T<700K. The observed pressure dependence of p is accounted for by the large pressure dependence of the frequency of the proposed soft mode. It is also suggested that this mode should depend on the stoichiometric parameter x for Ti1+xS2 and may account for the observed x dependence of the temperature dependence of rho .

Original languageEnglish
Article number004
Pages (from-to)L789-L796
JournalJournal of Physics C: Solid State Physics
Issue number26
StatePublished - 1981
Externally publishedYes


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