New aspects of phase segregation and junction formation in CuInSe2

R. Herberholz, H. W. Schock, U. Rau, J. H. Werner, T. Haalboom, T. Goedecke, F. Ernst, C. Beilharz, K. W. Benz, D. Cahen

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations


A reinvestigation of the phase diagram on the quasi-binary Cu2Se-In2Se3 cut reveals a much narrower existence range of the chalcopyrite α-phase as compared to previous phase diagrams towards In- and Ga-rich compositions. The presence of Na or replacement of In by Ga inhibits defect ordering and widens the existence range of the α-phase. Capacitance measurements reveal two types of junction metastabilities in Cu(In,Ga)Se2 solar cells. An increase of the capacitance after electron injection into the space charge region most likely relates to a local defect reaction. A change of the spatial distribution of charges after annealing under applied bias points to Cu-electromigration. We suggest that the potential determined by a positive surface charge and Cu-migration assist the formation of the Cu-poor (`ODC') surface. This mechanism also causes distinct differences in the properties of the Cu-poor surface and the bulk β-phase.

Original languageEnglish
Pages (from-to)323-326
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA
Duration: 29 Sep 19973 Oct 1997


Dive into the research topics of 'New aspects of phase segregation and junction formation in CuInSe2'. Together they form a unique fingerprint.

Cite this