TY - JOUR
T1 - New Approach for Determination of the Critical Behavior of Conductivity near the Metal-Insulator Transition in Doped Semiconductors
AU - Shlimak, I.
PY - 1998/1
Y1 - 1998/1
N2 - Three peculiarities of the metal-insulator transition in the vicinity of the critical impurity concentration Nc are discussed: (i) The temperature dependences of conductivity σ(T) for barely metallic samples are almost parallel. This allows to suggest a new method for determining at non-zero temperatures the value of the critical exponent μ in the scaling behavior of σ(0). It is shown that μ = 1 for different impurities in Ge and Si. (ii) The temperature-independent conductivity at N > Nc is proposed to be considered as the Mott minimal metallic conductivity σM. It is shown that σM normalizes the scaling behavior of σ(0) for various impurities, (iii) The temperature-induced delocalization at T > Td is observed for barely insulating samples. The values of Td are normalized by the mean energy of the Coulomb interaction.
AB - Three peculiarities of the metal-insulator transition in the vicinity of the critical impurity concentration Nc are discussed: (i) The temperature dependences of conductivity σ(T) for barely metallic samples are almost parallel. This allows to suggest a new method for determining at non-zero temperatures the value of the critical exponent μ in the scaling behavior of σ(0). It is shown that μ = 1 for different impurities in Ge and Si. (ii) The temperature-independent conductivity at N > Nc is proposed to be considered as the Mott minimal metallic conductivity σM. It is shown that σM normalizes the scaling behavior of σ(0) for various impurities, (iii) The temperature-induced delocalization at T > Td is observed for barely insulating samples. The values of Td are normalized by the mean energy of the Coulomb interaction.
UR - http://www.scopus.com/inward/record.url?scp=0032330830&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-3951(199801)205:1<287::AID-PSSB287>3.0.CO;2-C
DO - 10.1002/(SICI)1521-3951(199801)205:1<287::AID-PSSB287>3.0.CO;2-C
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AN - SCOPUS:0032330830
SN - 0370-1972
VL - 205
SP - 287
EP - 293
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
IS - 1
ER -