New Approach for Determination of the Critical Behavior of Conductivity near the Metal-Insulator Transition in Doped Semiconductors

I. Shlimak

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Three peculiarities of the metal-insulator transition in the vicinity of the critical impurity concentration Nc are discussed: (i) The temperature dependences of conductivity σ(T) for barely metallic samples are almost parallel. This allows to suggest a new method for determining at non-zero temperatures the value of the critical exponent μ in the scaling behavior of σ(0). It is shown that μ = 1 for different impurities in Ge and Si. (ii) The temperature-independent conductivity at N > Nc is proposed to be considered as the Mott minimal metallic conductivity σM. It is shown that σM normalizes the scaling behavior of σ(0) for various impurities, (iii) The temperature-induced delocalization at T > Td is observed for barely insulating samples. The values of Td are normalized by the mean energy of the Coulomb interaction.

Original languageEnglish
Pages (from-to)287-293
Number of pages7
JournalPhysica Status Solidi (B): Basic Research
Volume205
Issue number1
DOIs
StatePublished - Jan 1998

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