TY - JOUR
T1 - Neuronal Multi Unit Activity Processing with Metal Oxide Memristive Devices
AU - Sbandati, Caterina
AU - Jiang, Xiongfei
AU - Yadav, Deepika
AU - Stathopoulos, Spyros
AU - Cohen, Dana
AU - Serb, Alex
AU - Wang, Shiwei
AU - Prodromakis, Themis
N1 - Publisher Copyright:
© 2024 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - Intra-cortical brain-machine interfaces (BMIs), able to decode neural activity in real-time, represent a revolutionary opportunity for treating medical conditions. However, traditional systems focusing on single-neuron spike detection require high processing rates and power, hindering the up-scaling for neurons-population monitoring in clinical application. An intriguing proposition is the memristive integrating sensor (MIS) approach, which uses resistive RAM (RRAM) for threshold-based neural activity detection. MIS leverages analogue multi-state switching properties of metal-oxide RRAM to compress neural inputs by encoding above-threshold events in resistance displacement, facilitating efficient data down-sampling in the post-processing, enabling low-power, high-channel systems. Initially tested on spikes and local field potentials, here MIS is adapted to process multi-unit activity envelope (eMUA)—the envelope of entire spiking activity—which has recently been proposed as crucial input for real-time neuro-prosthetic control. Prior necessary modifications to the MIS for effective operation, this adaptation achieved over 95% sensitivity across two types of metal-oxide devices: Pt/TiOx/Pt and TiN/HfOx/TiN, proving its platform-agnostic capabilities. Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal-oxide-semiconductor (CMOS) front-ends. This eMUA-MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.
AB - Intra-cortical brain-machine interfaces (BMIs), able to decode neural activity in real-time, represent a revolutionary opportunity for treating medical conditions. However, traditional systems focusing on single-neuron spike detection require high processing rates and power, hindering the up-scaling for neurons-population monitoring in clinical application. An intriguing proposition is the memristive integrating sensor (MIS) approach, which uses resistive RAM (RRAM) for threshold-based neural activity detection. MIS leverages analogue multi-state switching properties of metal-oxide RRAM to compress neural inputs by encoding above-threshold events in resistance displacement, facilitating efficient data down-sampling in the post-processing, enabling low-power, high-channel systems. Initially tested on spikes and local field potentials, here MIS is adapted to process multi-unit activity envelope (eMUA)—the envelope of entire spiking activity—which has recently been proposed as crucial input for real-time neuro-prosthetic control. Prior necessary modifications to the MIS for effective operation, this adaptation achieved over 95% sensitivity across two types of metal-oxide devices: Pt/TiOx/Pt and TiN/HfOx/TiN, proving its platform-agnostic capabilities. Furthermore, towards the integration of MIS with silicon chips, it is shown that it can reduce total system power consumption to below 1 µW, as RRAM encoding stage relaxes the signal preservation and noise requirements that challenge traditional complementary metal-oxide-semiconductor (CMOS) front-ends. This eMUA-MIS adaptation offers a viable pathway for developing more scalable and efficient BMIs for clinical use.
KW - HfOx
KW - MIS
KW - TiOx
KW - brain-machine interface
KW - metal-oxide RRAM
KW - multi-unit activity envelope
UR - http://www.scopus.com/inward/record.url?scp=85208170635&partnerID=8YFLogxK
U2 - 10.1002/aelm.202400638
DO - 10.1002/aelm.202400638
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AN - SCOPUS:85208170635
SN - 2199-160X
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
ER -