TY - GEN
T1 - Near-threshold 40nm Supply Feedback C-element
AU - Schwartz, I
AU - Teman, A
AU - Dobkin, R
AU - Fish, A
N1 - Place of conference:Malaysia
PY - 2011
Y1 - 2011
N2 - The growing demand for ultra low power applications has drawn interest in low voltage digital circuits, operating in the near-threshold region. Asynchronous circuits, operating with near-threshold supply voltages, are more attractive than their synchronous counterparts due to higher resilience to PVT variations. This paper presents a novel ultra-low power C-element, which is a basic building block in common asynchronous circuits. The proposed C-element is based on a Supply Feedback concept, implemented in a cross-coupled inverter latch. Utilization of this concept enables functionality under local and global variations down to 0.3V. The cell was designed using a standard low-power 40nm technology. Simulation results show a 5.8X-24X leakage reduction at 300mV as compared to a conventional Weak Feedback C-element operating at its minimal VDD. Monte Carlo simulations prove that the proposed cell remains fully functional under global and local process variations.
AB - The growing demand for ultra low power applications has drawn interest in low voltage digital circuits, operating in the near-threshold region. Asynchronous circuits, operating with near-threshold supply voltages, are more attractive than their synchronous counterparts due to higher resilience to PVT variations. This paper presents a novel ultra-low power C-element, which is a basic building block in common asynchronous circuits. The proposed C-element is based on a Supply Feedback concept, implemented in a cross-coupled inverter latch. Utilization of this concept enables functionality under local and global variations down to 0.3V. The cell was designed using a standard low-power 40nm technology. Simulation results show a 5.8X-24X leakage reduction at 300mV as compared to a conventional Weak Feedback C-element operating at its minimal VDD. Monte Carlo simulations prove that the proposed cell remains fully functional under global and local process variations.
UR - https://scholar.google.co.il/scholar?q=Near-threshold+40nm+supply+feedback+C-element&btnG=&hl=en&as_sdt=0%2C5
UR - https://scholar.google.co.il/scholar?q=Near-Threshold+40nm+Supply+Feedback+C-Element&btnG=&hl=en&as_sdt=0%2C5
M3 - Conference contribution
BT - Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
PB - IEEE
ER -