TY - JOUR
T1 - Nanostructured polymer brushes
AU - Schmelmer, Ursula
AU - Paul, Anne
AU - Küller, Alexander
AU - Steenackers, Marin
AU - Ulman, Abraham
AU - Grunze, Michael
AU - Gölzhäuser, Armin
AU - Jordan, Rainer
PY - 2007/3
Y1 - 2007/3
N2 - Nanopatterned polymer brushes with sub-50-nm resolution were prepared by a combination of electron-beam chemical lithography (EBCL) of self-assembled monolayers (SAMs) and surface-initiated photopolymerization (SIPP). As a further development of our previous work, selective EBCL was performed with a highly focused electron beam and not via a mask, to region-selectively convert a SAM of 4′-nitro-1,1′-biphenyl-4-thiol to defined areas of crosslinked 4′-amino-1,1′-biphenyl-4-thiol. These "written" structures were then used to prepare surface-bonded, asymmetric, azo initiator sites of 4′-azomethylmalonodinitrile-1,1′-biphenyl-4-thiol. In the presence of bulk styrene, SIPP amplified the primary structures of line widths from 500 to 10 nm to polystyrene structures of line widths 530 nm down to approximately 45 nm at a brush height of 10 or 7 nm, respectively, as measured by scanning electron microscopy and atomic force microscopy (AFM). The relative position of individual structures was within a tolerance of a few nanometers, as verified by AFM. At line-to-line spacings down to 50-70 nm, individual polymer brush structures are still observable. Below this threshold, neighboring structures merge due to chain overlap.
AB - Nanopatterned polymer brushes with sub-50-nm resolution were prepared by a combination of electron-beam chemical lithography (EBCL) of self-assembled monolayers (SAMs) and surface-initiated photopolymerization (SIPP). As a further development of our previous work, selective EBCL was performed with a highly focused electron beam and not via a mask, to region-selectively convert a SAM of 4′-nitro-1,1′-biphenyl-4-thiol to defined areas of crosslinked 4′-amino-1,1′-biphenyl-4-thiol. These "written" structures were then used to prepare surface-bonded, asymmetric, azo initiator sites of 4′-azomethylmalonodinitrile-1,1′-biphenyl-4-thiol. In the presence of bulk styrene, SIPP amplified the primary structures of line widths from 500 to 10 nm to polystyrene structures of line widths 530 nm down to approximately 45 nm at a brush height of 10 or 7 nm, respectively, as measured by scanning electron microscopy and atomic force microscopy (AFM). The relative position of individual structures was within a tolerance of a few nanometers, as verified by AFM. At line-to-line spacings down to 50-70 nm, individual polymer brush structures are still observable. Below this threshold, neighboring structures merge due to chain overlap.
KW - Nanolithography
KW - Patterning
KW - Polymer brushes
KW - Polymerization
UR - http://www.scopus.com/inward/record.url?scp=33947236726&partnerID=8YFLogxK
U2 - 10.1002/smll.200600528
DO - 10.1002/smll.200600528
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C2 - 17245782
AN - SCOPUS:33947236726
SN - 1613-6810
VL - 3
SP - 459
EP - 465
JO - Small
JF - Small
IS - 3
ER -