Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

Anders V. Bjørlig; Merlin Von Soosten; Ricci Erlandsen; Rasmus Tindal Dahm; Yu Zhang; Yulin Gan; Yunzhong Chen; Nini Pryds; Thomas S. Jespersen

doi:10.1063/1.5026362

Nanoscale patterning of electronic devices at the amorphous LaAlO₃/SrTiO₃ oxide interface using an electron sensitive polymer mask

Anders V. Bjørlig, Merlin Von Soosten, Ricci Erlandsen, Rasmus Tindal Dahm, Yu Zhang, Yulin Gan, Yunzhong Chen, Nini Pryds, Thomas S. Jespersen

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO₃/SrTiO₃ heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ∼100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.

Original language	English
Article number	171606
Journal	Applied Physics Letters
Volume	112
Issue number	17
DOIs	https://doi.org/10.1063/1.5026362
State	Published - 23 Apr 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

Funding

We acknowledge the Villum Foundation for financial support. The Center for Quantum Devices was supported by the Danish National Research Foundation.

Funders	Funder number
Villum Fonden
Danmarks Grundforskningsfond

Access to Document

10.1063/1.5026362

Cite this

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abstract = "A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ∼100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.",

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AU - Von Soosten, Merlin

AU - Erlandsen, Ricci

AU - Dahm, Rasmus Tindal

AU - Zhang, Yu

AU - Gan, Yulin

AU - Chen, Yunzhong

AU - Pryds, Nini

AU - Jespersen, Thomas S.

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