Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

Anders V. Bjørlig, Merlin Von Soosten, Ricci Erlandsen, Rasmus Tindal Dahm, Yu Zhang, Yulin Gan, Yunzhong Chen, Nini Pryds, Thomas S. Jespersen

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6 Scopus citations

Abstract

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ∼100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.

Original languageEnglish
Article number171606
JournalApplied Physics Letters
Volume112
Issue number17
DOIs
StatePublished - 23 Apr 2018
Externally publishedYes

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Publisher Copyright:
© 2018 Author(s).

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