Abstract
We present a 'top-down' patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.
| Original language | English |
|---|---|
| Article number | 085301 |
| Journal | Nanotechnology |
| Volume | 33 |
| Issue number | 8 |
| DOIs | |
| State | Published - 30 Nov 2021 |
Bibliographical note
Publisher Copyright:© 2021 The Author(s). Published by IOP Publishing Ltd.
Funding
Original content from this work may be used under the terms of the . Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. European Cooperation in Science and Technology https://doi.org/10.13039/501100000921 CA16218 Horizon 2020 Framework Programme https://doi.org/10.13039/100010661 ERA-NET QUANTERA QUANTOX Grant Agreement No. 73147 Ministero dell’Istruzione, dell’Universit� e della Ricerca 20177SL7HC PRIN project TOP-SPIN (Grant No. PRIN 20177SL7HC) European Research Council ERC-2019-COG-866236 Israeli Science Foundation ISF-1281/17 yes � 2021 The Author(s). Published by IOP Publishing Ltd Creative Commons Attribution 4.0 licence
| Funders | Funder number |
|---|---|
| ERC-2019-COG-866236 Israeli Science Foundation | ISF-1281/17 |
| Ministero dell’Istruzione, dell’Universit� e della Ricerca 20177SL7HC | PRIN 20177SL7HC |
Keywords
- nanodevices
- oxide 2DES
- oxide field effect devices