Nanometric diamond delta doping with boron

James E. Butler; Anatoly Vikharev; Alexei Gorbachev; Mikhail Lobaev; Anatoly Muchnikov; Dmitry Radischev; Vladimir Isaev; Valerii Chernov; Sergey Bogdanov; Mikail Drozdov; Evgeniy Demidov; Ekaterina Surovegina; Vladimir Shashkin; Albert Davidov; Haiyan Tan; Louisa Meshi; Alexander C. Pakpour-Tabrizi; Marie Laure Hicks; Richard B. Jackman

doi:10.1002/pssr.201600329

Nanometric diamond delta doping with boron

James E. Butler, Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, Valerii Chernov, Sergey Bogdanov, Mikail Drozdov, Evgeniy Demidov, Ekaterina Surovegina, Vladimir Shashkin, Albert Davidov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour-Tabrizi, Marie Laure Hicks, Richard B. Jackman

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm²/Vs and sheet carrier concentrations to 6 × 10¹³ cm^–2, thus enabling a new class of active diamond electronic devices.

Original language	English
Article number	1600329
Journal	Physica Status Solidi - Rapid Research Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1002/pssr.201600329
State	Published - 1 Jan 2017
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Funding

Funders	Funder number
Horizon 2020 Framework Programme	640947
Engineering and Physical Sciences Research Council	EP/H020055/1, EP/F026110/1

Keywords

Hall effect
boron
carrier mobility
delta doping
diamond
growth

Access to Document

10.1002/pssr.201600329

Cite this

Butler, J. E., Vikharev, A., Gorbachev, A., Lobaev, M., Muchnikov, A., Radischev, D., Isaev, V., Chernov, V., Bogdanov, S., Drozdov, M., Demidov, E., Surovegina, E., Shashkin, V., Davidov, A., Tan, H., Meshi, L., Pakpour-Tabrizi, A. C., Hicks, M. L., & Jackman, R. B. (2017). Nanometric diamond delta doping with boron. Physica Status Solidi - Rapid Research Letters, 11(1), Article 1600329. https://doi.org/10.1002/pssr.201600329

@article{40cb02dcf04c42f58b159369cd5f2b50,

title = "Nanometric diamond delta doping with boron",

abstract = "Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond {\textquoteleft}delta doped{\textquoteright} layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices.",

keywords = "Hall effect, boron, carrier mobility, delta doping, diamond, growth",

author = "Butler, {James E.} and Anatoly Vikharev and Alexei Gorbachev and Mikhail Lobaev and Anatoly Muchnikov and Dmitry Radischev and Vladimir Isaev and Valerii Chernov and Sergey Bogdanov and Mikail Drozdov and Evgeniy Demidov and Ekaterina Surovegina and Vladimir Shashkin and Albert Davidov and Haiyan Tan and Louisa Meshi and Pakpour-Tabrizi, {Alexander C.} and Hicks, {Marie Laure} and Jackman, {Richard B.}",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2017",

month = jan,

day = "1",

doi = "10.1002/pssr.201600329",

language = "אנגלית",

volume = "11",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "1",

}

Butler, JE, Vikharev, A, Gorbachev, A, Lobaev, M, Muchnikov, A, Radischev, D, Isaev, V, Chernov, V, Bogdanov, S, Drozdov, M, Demidov, E, Surovegina, E, Shashkin, V, Davidov, A, Tan, H, Meshi, L, Pakpour-Tabrizi, AC, Hicks, ML & Jackman, RB 2017, 'Nanometric diamond delta doping with boron', Physica Status Solidi - Rapid Research Letters, vol. 11, no. 1, 1600329. https://doi.org/10.1002/pssr.201600329

TY - JOUR

T1 - Nanometric diamond delta doping with boron

AU - Butler, James E.

AU - Vikharev, Anatoly

AU - Gorbachev, Alexei

AU - Lobaev, Mikhail

AU - Muchnikov, Anatoly

AU - Radischev, Dmitry

AU - Isaev, Vladimir

AU - Chernov, Valerii

AU - Bogdanov, Sergey

AU - Drozdov, Mikail

AU - Demidov, Evgeniy

AU - Surovegina, Ekaterina

AU - Shashkin, Vladimir

AU - Davidov, Albert

AU - Tan, Haiyan

AU - Meshi, Louisa

AU - Pakpour-Tabrizi, Alexander C.

AU - Hicks, Marie Laure

AU - Jackman, Richard B.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices.

AB - Diamond is desired for active semiconducting device because of it high carrier mobility, high voltage breakdown resistance, and high thermal diffusivity. Exploiting diamond as a semiconductor is hampered by the lack of shallow dopants to create sufficient electronic carriers at room temperature. In this work, nanometer thick, heavily boron doped epitaxial diamond ‘delta doped’ layers have been grown on ultra smooth diamond surfaces which demonstrate p type conduction with enhanced Hall mobilities of up to 120 cm2/Vs and sheet carrier concentrations to 6 × 1013 cm–2, thus enabling a new class of active diamond electronic devices.

KW - Hall effect

KW - boron

KW - carrier mobility

KW - delta doping

KW - diamond

KW - growth

UR - http://www.scopus.com/inward/record.url?scp=85008253510&partnerID=8YFLogxK

U2 - 10.1002/pssr.201600329

DO - 10.1002/pssr.201600329

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:85008253510

SN - 1862-6254

VL - 11

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 1

M1 - 1600329

ER -

Nanometric diamond delta doping with boron

Abstract

Bibliographical note

Funding

Keywords

Access to Document

Other files and links

Fingerprint

Cite this