Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang; C. Liu; A. Gott; S. Denchitcharoen; P. Shields; L. Meshi; S. Khongphetsak; I. Griffiths; D. Cherns; R. Campion

doi:10.2150/jlve.32.187

Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang, C. Liu, A. Gott, S. Denchitcharoen, P. Shields, L. Meshi, S. Khongphetsak, I. Griffiths, D. Cherns, R. Campion

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

Original language	English
Pages (from-to)	187-190
Number of pages	4
Journal	Journal of Light and Visual Environment
Volume	32
Issue number	2
DOIs	https://doi.org/10.2150/jlve.32.187
State	Published - 2008
Externally published	Yes

Funding

Funders	Funder number
Engineering and Physical Sciences Research Council	EP/D080622/1

Keywords

GaN
Light emitting diodes
Nano-pendeo
Silicon

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10.2150/jlve.32.187

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AU - Liu, C.

AU - Gott, A.

AU - Denchitcharoen, S.

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AU - Meshi, L.

AU - Khongphetsak, S.

AU - Griffiths, I.

AU - Cherns, D.

AU - Campion, R.

PY - 2008

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KW - GaN

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KW - Nano-pendeo

KW - Silicon

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Nano-pendeo GaN growth of light emitting devices on silicon

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Keywords

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