Nano-pendeo GaN growth of light emitting devices on silicon

Wang Nang Wang, C. Liu, A. Gott, S. Denchitcharoen, P. Shields, L. Meshi, S. Khongphetsak, I. Griffiths, D. Cherns, R. Campion

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction amd stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalJournal of Light and Visual Environment
Issue number2
StatePublished - 2008
Externally publishedYes


FundersFunder number
Engineering and Physical Sciences Research CouncilEP/D080622/1


    • GaN
    • Light emitting diodes
    • Nano-pendeo
    • Silicon


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