N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Ann S. Erickson; Arava Zohar; David Cahen

doi:10.1002/aenm.201301724

N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Ann S. Erickson
, Arava Zohar
, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.

Original language	English
Article number	1301724
Journal	Advanced Energy Materials
Volume	4
Issue number	9
DOIs	https://doi.org/10.1002/aenm.201301724
State	Published - 24 Jun 2014
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

conducting polymers
field-effect transistors
inversion layers
solar cells

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10.1002/aenm.201301724

Cite this

@article{fdea7082a53b415c863fef7b3f447fd5,

title = "N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si",

abstract = "The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.",

keywords = "conducting polymers, field-effect transistors, inversion layers, solar cells",

author = "Erickson, \{Ann S.\} and Arava Zohar and David Cahen",

year = "2014",

month = jun,

day = "24",

doi = "10.1002/aenm.201301724",

language = "אנגלית",

volume = "4",

journal = "Advanced Energy Materials",

issn = "1614-6832",

publisher = "John Wiley and Sons Inc.",

number = "9",

}

TY - JOUR

T1 - N-Si-organic inversion layer interfaces

T2 - A low temperature deposition method for forming a p-n homojunction in n-Si

AU - Erickson, Ann S.

AU - Zohar, Arava

AU - Cahen, David

PY - 2014/6/24

Y1 - 2014/6/24

N2 - The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.

AB - The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.

KW - conducting polymers

KW - field-effect transistors

KW - inversion layers

KW - solar cells

UR - https://www.scopus.com/pages/publications/84903540358

U2 - 10.1002/aenm.201301724

DO - 10.1002/aenm.201301724

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84903540358

SN - 1614-6832

VL - 4

JO - Advanced Energy Materials

JF - Advanced Energy Materials

IS - 9

M1 - 1301724

ER -

N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Abstract

UN SDGs

Keywords

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