N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Ann S. Erickson; Arava Zohar; David Cahen

doi:10.1002/aenm.201301724

N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Ann S. Erickson, Arava Zohar, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.

Original language	English
Article number	1301724
Journal	Advanced Energy Materials
Volume	4
Issue number	9
DOIs	https://doi.org/10.1002/aenm.201301724
State	Published - 24 Jun 2014
Externally published	Yes

Keywords

conducting polymers
field-effect transistors
inversion layers
solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/aenm.201301724

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abstract = "The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.",

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T2 - A low temperature deposition method for forming a p-n homojunction in n-Si

AU - Erickson, Ann S.

AU - Zohar, Arava

AU - Cahen, David

PY - 2014/6/24

Y1 - 2014/6/24

N2 - The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.

AB - The built-in voltage of poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)-nSi hybrid solar cells is demonstrated to indicate strong inversion over most substrate donor concentrations. This implies a p-n homojunction, induced in the Si surface by the high work function of the top contact. This induced homojunction is then used to form the source and drain electrodes in a field-effect transistor.

KW - conducting polymers

KW - field-effect transistors

KW - inversion layers

KW - solar cells

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ER -

N-Si-organic inversion layer interfaces: A low temperature deposition method for forming a p-n homojunction in n-Si

Abstract

Keywords

UN SDGs

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