Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions

The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.