TY - JOUR
T1 - Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions
AU - Sharoni, Amos
AU - Ramírez, Juan Gabriel
AU - Schuller, Ivan K.
PY - 2008/7/11
Y1 - 2008/7/11
N2 - The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.
AB - The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.
UR - http://www.scopus.com/inward/record.url?scp=48249110699&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.101.026404
DO - 10.1103/PhysRevLett.101.026404
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AN - SCOPUS:48249110699
SN - 0031-9007
VL - 101
JO - Physical Review Letters
JF - Physical Review Letters
IS - 2
M1 - 026404
ER -