Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions

Amos Sharoni, Juan Gabriel Ramírez, Ivan K. Schuller

Research output: Contribution to journalArticlepeer-review

124 Scopus citations

Abstract

The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.

Original languageEnglish
Article number026404
JournalPhysical Review Letters
Volume101
Issue number2
DOIs
StatePublished - 11 Jul 2008
Externally publishedYes

Fingerprint

Dive into the research topics of 'Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions'. Together they form a unique fingerprint.

Cite this