Molecule-metal polarization at rectifying GaAs interfaces

Keyphrases

• Gallium Arsenide 100%
• Semiconductors 40%
• Systematic Change 40%
• Semiconductor Surface 40%
• Molecular Effects 40%
• Average Order 40%
• Electronic Properties 20%
• Current-voltage Characteristics 20%
• Molecular Layer 20%
• Organic Monolayers 20%
• Current Flow 20%
• Order of Magnitude 20%
• Ambient Conditions 20%
• Electrodynamics 20%
• Organic Molecules 20%
• Electrical Properties 20%
• Tunneling Effect 20%
• Molecular Films 20%
• Metal Contact 20%
• Doping Type 20%
• Electron Affinity 20%
• Metal Deposition 20%
• Work Function 20%
• Electrostatic Effect 20%
• Large-area Devices 20%
• Soft Element 20%
• Triple Metal 20%
• Dicarboxylate Ligands 20%
• Interfacial Dipole 20%
• Affinity Function 20%
• Effective Barrier Height 20%
• Metal Monolayer 20%
• Deposition Methods 20%
• Metal-organic Materials 20%
• Molecule Electronics 20%
• Metal Organic Molecules 20%

Material Science

• Gallium Arsenide 100%
• Monolayers 80%
• Film 40%
• Current Voltage Characteristics 20%
• Electronic Property 20%
• Metal Deposition 20%