Molecular switching operation in gate constricted interface of MoS₂ and hBN heterostructure

Keyphrases

• Heterostructure 100%
• Charge Transfer 100%
• Molybdenite 100%
• Molecular Switches 100%
• Switching Operation 100%
• Constriction 66%
• Semiconductor Interfaces 66%
• Hexagonal Boron Nitride (h-BN) 66%
• Conductance 33%
• Room Temperature 33%
• Heterointerface 33%
• Transport Phenomena 33%
• Tunability 33%
• Electrically Controlled 33%
• Intramolecular Charge Transfer 33%
• Two Dimensional Materials 33%
• Atomically Thin 33%
• First-principles Calculations 33%
• Switch-off 33%
• Transport Characteristics 33%
• Electrostatic Control 33%
• Hetero 33%
• Parts per Billion 33%
• Nitrogen Dioxide 33%
• Local Gate 33%
• Mesoscopic Transport 33%
• Carrier Confinement 33%
• High On-off Ratio 33%

Material Science

• Heterojunction 100%
• Transport Phenomena 50%
• Molybdenum 50%
• Two-Dimensional Material 50%
• Boron Nitride 50%
• Nitrogen Dioxide 50%