Molecular modification of an ionic semiconductor-metal interface: ZnO/molecule/Au diodes

Adi Salomon; Dvora Berkovich; David Cahen

doi:10.1063/1.1543638

Molecular modification of an ionic semiconductor-metal interface: ZnO/molecule/Au diodes

Adi Salomon
, Dvora Berkovich
, David Cahen

Weizmann Institute of Science

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

A study was performed on molecular modification of an ionic semiconductor-metal interface. It was found that with ZnO the interface behavior was 0.55, five times that with GaAs. It agreed well with the results for junctions of these materials with different metals, prepared in ultrahigh vacuum.

Original language	English
Pages (from-to)	1051-1053
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	7
DOIs	https://doi.org/10.1063/1.1543638
State	Published - 17 Feb 2003
Externally published	Yes

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10.1063/1.1543638

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abstract = "A study was performed on molecular modification of an ionic semiconductor-metal interface. It was found that with ZnO the interface behavior was 0.55, five times that with GaAs. It agreed well with the results for junctions of these materials with different metals, prepared in ultrahigh vacuum.",

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Molecular modification of an ionic semiconductor-metal interface: ZnO/molecule/Au diodes

Abstract

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