Abstract
A study was performed on molecular modification of an ionic semiconductor-metal interface. It was found that with ZnO the interface behavior was 0.55, five times that with GaAs. It agreed well with the results for junctions of these materials with different metals, prepared in ultrahigh vacuum.
| Original language | English |
|---|---|
| Pages (from-to) | 1051-1053 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 7 |
| DOIs | |
| State | Published - 17 Feb 2003 |
| Externally published | Yes |