Molecular electronics at metal/semiconductor junctions. Si inversion by sub-nanometer molecular films

Omer Yaffe, Luc Scheres, Sreenivasa Reddy Puniredd, Nir Stein, Ariel Biller, Rotem Har Lavan, Hagay Shpaisman, Han Zuilhof, Hossam Haick, David Cahen, Ayelet Vilan

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission, and, as such, is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.

Original languageEnglish
Pages (from-to)2390-2394
Number of pages5
JournalNano Letters
Volume9
Issue number6
DOIs
StatePublished - 10 Jun 2009
Externally publishedYes

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