TY - JOUR
T1 - Molecular electronics at metal/semiconductor junctions. Si inversion by sub-nanometer molecular films
AU - Yaffe, Omer
AU - Scheres, Luc
AU - Puniredd, Sreenivasa Reddy
AU - Stein, Nir
AU - Biller, Ariel
AU - Lavan, Rotem Har
AU - Shpaisman, Hagay
AU - Zuilhof, Han
AU - Haick, Hossam
AU - Cahen, David
AU - Vilan, Ayelet
PY - 2009/6/10
Y1 - 2009/6/10
N2 - Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission, and, as such, is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.
AB - Electronic transport across n-Si-alkyl monolayer/Hg junctions is, at reverse and low forward bias, independent of alkyl chain length from 18 down to 1 or 2 carbons This and further recent results indicate that electron transport is minority, rather than majority carrier dominated, occurs via generation and recombination, rather than (the earlier assumed) thermionic emission, and, as such, is rather insensitive to interface properties. The (m)ethyl results show that binding organic molecules directly to semiconductors provides semiconductor/metal interface control options, not accessible otherwise.
UR - http://www.scopus.com/inward/record.url?scp=66749127327&partnerID=8YFLogxK
U2 - 10.1021/nl900953z
DO - 10.1021/nl900953z
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C2 - 19438192
AN - SCOPUS:66749127327
SN - 1530-6984
VL - 9
SP - 2390
EP - 2394
JO - Nano Letters
JF - Nano Letters
IS - 6
ER -