Molecular-beam epitaxial growth and surface diffusion

David A. Kessler, Herbert Levine, Leonard M. Sander

Research output: Contribution to journalArticlepeer-review

86 Scopus citations

Abstract

We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics.

Original languageEnglish
Pages (from-to)100-103
Number of pages4
JournalPhysical Review Letters
Volume69
Issue number1
DOIs
StatePublished - 1992
Externally publishedYes

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