Molecular approach to surface control of chalcogenide semiconductors

Ellen Moons, Merlin Bruening, Larisa Burstein, Jacqueline Libman, Abraham Shanzer, David Cahen

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4 Scopus citations


The interaction between a chalcogenide semiconductor surface and a specific chelating ligand was studied by a number of complementary spectroscopic methods (UV/VIS, FTIR, XPS). FTIR suggests that the chelating ligand (diphenylhydroxamic acid) complexes an In3+ ion in CuInSe2, and a Cd2+ ion in CdTe, accompanied by the loss of a proton. Contact potential measurements showed that the adsorbed ligand changes the semiconductor electron affinity without significantly influencing the band bending. On the basis of these and other results, we suggest that the molecular dipole ofthe chelating ligand is responsible for the change in surface potential. Because this dipole can be modified without changing the ligand’s binding group, this finding opens the way to control surface potential by varying the dipole moment ofthe adsorbed ligand without changing the binding functional group.

Original languageEnglish
Pages (from-to)730-734
Number of pages5
JournalJapanese Journal of Applied Physics
Issue numberS3
StatePublished - Jan 1993
Externally publishedYes


  • CdTe
  • Chemisorptions
  • Contact potential
  • CulnSe
  • Dipole
  • Electron affinity
  • FI-IR
  • Workfunction


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