Modulating the rate of charge transport in a metal-organic framework thin film using host:guest chemistry

Idan Hod, Omar K. Farha, Joseph T. Hupp

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

Herein we demonstrate the use of host-guest chemistry to modulate rates of charge transport in metal-organic framework (MOF) films. The kinetics of site-to-site of charge hopping and, in turn, the overall redox conductivity, of a ferrocene-modified MOF can be altered by up to 30-fold by coupling electron exchange to the oxidation-state-dependent formation of inclusion complexes between cyclodextrin and channel-tethered metallocenes.

Original languageEnglish
Pages (from-to)1705-1708
Number of pages4
JournalChemical Communications
Volume52
Issue number8
DOIs
StatePublished - 28 Jan 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2016.

Funding

This work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, grant no. DE-FG02-87ER13808 and by Northwestern University.

FundersFunder number
U.S. Department of Energy
Office of Science
Basic Energy SciencesDE-FG02-87ER13808
Northwestern University

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