Modulating the rate of charge transport in a metal-organic framework thin film using host:guest chemistry

Idan Hod, Omar K. Farha, Joseph T. Hupp

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

Herein we demonstrate the use of host-guest chemistry to modulate rates of charge transport in metal-organic framework (MOF) films. The kinetics of site-to-site of charge hopping and, in turn, the overall redox conductivity, of a ferrocene-modified MOF can be altered by up to 30-fold by coupling electron exchange to the oxidation-state-dependent formation of inclusion complexes between cyclodextrin and channel-tethered metallocenes.

Original languageEnglish
Pages (from-to)1705-1708
Number of pages4
JournalChemical Communications
Volume52
Issue number8
DOIs
StatePublished - 28 Jan 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2016.

Fingerprint

Dive into the research topics of 'Modulating the rate of charge transport in a metal-organic framework thin film using host:guest chemistry'. Together they form a unique fingerprint.

Cite this