Modulated Photoluminescence at Low Temperature Measurements with Controlled Electron Concentration in Asymmetric GaAs/GaAlAs/GaAs Quantum Wells

The analysis of low temperature modulated photoluminescence as a function of the dopant concentration is presented for GaAs/GaAlAs/GaAs Asymmetric Quantum Wells (AQW). Such variation can enable optical pumping and Inter-Sub-Band Transitions (ISBT). Moreover, while using external trigger, like CO₂ laser, controlled electron concentration dependent photoluminescence is measured. As a function of the reaction time of the transition phenomenon (absorption and relaxation), and of its intensity, one can use such special structure for the benefit of electro-optical communication at the nanoscale range. Numerical and experimental results match, and the method can be used towards the integration of AQW in advanced devices.