MODELING OF ″MEMORY″ EFFECTS IN AMORPHOUS SEMICONDUCTORS.

A. N. Ionov; S. M. Ryvkin; I. S. Shlimak

MODELING OF ″MEMORY″ EFFECTS IN AMORPHOUS SEMICONDUCTORS.

A. N. Ionov
, S. M. Ryvkin
, I. S. Shlimak

Department of Physics - at Bar-Ilan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Memory effects in n-type germanium heavily doped and strongly compensated by irradiation with slow and fast neutrons serving as a model of an amorphous semiconductor material are studied concerning the kinetics of the photoconductivity at 4. 2K.

Original language	English
Pages (from-to)	1947-1948
Number of pages	2
Journal	Soviet physics. Semiconductors
Volume	6
Issue number	11
State	Published - 1973

Cite this

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title = "MODELING OF ″MEMORY″ EFFECTS IN AMORPHOUS SEMICONDUCTORS.",

abstract = "Memory effects in n-type germanium heavily doped and strongly compensated by irradiation with slow and fast neutrons serving as a model of an amorphous semiconductor material are studied concerning the kinetics of the photoconductivity at 4. 2K.",

author = "Ionov, \{A. N.\} and Ryvkin, \{S. M.\} and Shlimak, \{I. S.\}",

year = "1973",

language = "אנגלית",

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issn = "0038-5700",

publisher = "American Institute of Physics",

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AU - Shlimak, I. S.

PY - 1973

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N2 - Memory effects in n-type germanium heavily doped and strongly compensated by irradiation with slow and fast neutrons serving as a model of an amorphous semiconductor material are studied concerning the kinetics of the photoconductivity at 4. 2K.

AB - Memory effects in n-type germanium heavily doped and strongly compensated by irradiation with slow and fast neutrons serving as a model of an amorphous semiconductor material are studied concerning the kinetics of the photoconductivity at 4. 2K.

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SN - 0038-5700

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SP - 1947

EP - 1948

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

IS - 11

ER -

MODELING OF ″MEMORY″ EFFECTS IN AMORPHOUS SEMICONDUCTORS.

Abstract

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